PART |
Description |
Maker |
IRHG7110 |
100V, 4 N-Channel Thru-Hole Radiation Hardened Power MOSFET(100V,通孔安装抗辐射功率四N沟道MOSFET)
|
International Rectifier
|
IRFD110 |
Power MOSFET(Vdss=100V, Rds(on)=0.54ohm, Id=1.0A) 功率MOSFET(减振钢板基本\u003d 100V的,的Rds(on)\u003d 0.54ohm,身份证\u003d 1.0安培 Power MOSFET(Vdss=100V/ Rds(on)=0.54ohm/ Id=1.0A) 100V Single N-Channel HEXFET Power MOSFET in a HEXDIP package
|
International Rectifier, Corp. IRF[International Rectifier]
|
IRF5NJ540 |
Avalanche Energy Ratings POWER MOSFET N-CHANNEL(Vdss=100V, Rds(on)=0.052ohm, Id=22A*) SURFACE MOUNT (SMD-0.5)100V, N-CHANNEL 100V Single N-Channel Hi-Rel MOSFET in a SMD-0.5 package
|
IRF[International Rectifier]
|
2SD2195 2SD1867 2SD1980 2SD2398 |
Power Transistor(????朵?绠? Transistors Power Transistor (100V 2A) Power Transistor (100V / 2A) Power Transistor (100V , 2A) 功率晶体管(100V的,2A
|
Rohm CO.,LTD. ROHM[Rohm] Rohm Co., Ltd.
|
IRFL4310 IRFL4310TR |
HEXFET? Power MOSFET 1.6 A, 100 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA Power MOSFET(Vdss=100V, Rds(on)=0.20ohm, Id=1.6A) 100V Single N-Channel HEXFET Power MOSFET in a SOT-223 package
|
IRF[International Rectifier]
|
HUF76633S3S HUF76633P3 HUF76633S3ST HUF76633S3STNL |
38A,100V, 0.036 Ohm, N-Channel, Logic Level UltraFET Power MOSFET 38A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFETPower MOSFET 38A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFET Power MOSFET 39 A, 100 V, 0.037 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 39A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 100V的五(巴西)直| 39A条(丁)|63AB 38A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFET Power MOSFET 39 A, 100 V, 0.037 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor, Corp. Intersil, Corp.
|
BUZ72L BUZ72LC67078-S1327-A2 BUZ72LSMD |
Power MOSFET, 100V, D²PAK , RDSon=0.2 Ohm, 10A, LL Low Voltage MOSFETs - Power MOSFET, 100V, TO-220, RDSon=0.2 Ohm, 10A, LL SIPMOS Power Transistor Single-coil dual-output step-down DC/DC converter for digital base band and multimedia processor supply SIPMOS Power Transistor
|
Infineon Technologies AG
|
IRF9510 FN2214 |
From old datasheet system 3.0A, 100V, 1.200 Ohm, P-Channel Power MOSFET 3.0A/ 100V/ 1.200 Ohm/ P-Channel Power MOSFET 3.0A, 100V, 1.200 Ohm, P-Channel Power
MOSFET(3.0A, 100V, 1.200 Ω,P沟道功率MOS场效应管)
|
Intersil Corporation
|
IRFP4710 IRFP4710PBF |
100V Single N-Channel HEXFET Power MOSFET in a TO-247AC package Power MOSFET(Vdss=100V, Rds(on)max=0.014ohm, Id=72A) 功率MOSFET(减振钢板基本\u003d 100V的,的Rdson)最大值\u003d 0.014ohm,身份证\u003d 72A条)
|
IR International Rectifier, Corp.
|
BUZ22SMD BUZ22E3045A BUZ22E3046 |
Power MOSFET, 100V,D²PAK , RDSon=0.055 Ohm, 34A, NL Low Voltage MOSFETs - Power MOSFET, 100V,DPAK , RDSon=0.055 Ohm, 34A, NL N-Channel SIPMOS Power Transistor
|
Infineon
|
BUZ21 BUZ21SMD |
Low Voltage MOSFETs - Power MOSFET, 100V,DPAK , RDSon=0.085 Ohm, 21A, NL Power MOSFET, 100V,D²PAK , RDSon=0.085 Ohm, 21A, NL SIPMOS Power Transistor
|
Infineon Technologies AG
|
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